Title:
III族窒化物4元材料系を用いた半導体構造体
Document Type and Number:
Japanese Patent JP4288030
Kind Code:
B2
Abstract:
A group III-nitride quatenary material system and method is disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduces or eliminates phase separation and provides increased emission efficiency and reliability. In an exemplary embodiment the semiconductor structure includes first GaAINAs layer of a first conduction type formed substantially without phase separation, an GaAINAs active layer substantially without phase separation, and a third GaAINAs layer of an opposite conduction type formed substantially without phase separation.
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Inventors:
Toru Takayama
Takaaki Baba
James E Harris Jr.
Takaaki Baba
James E Harris Jr.
Application Number:
JP2001514517A
Publication Date:
July 01, 2009
Filing Date:
March 01, 2000
Export Citation:
Assignee:
Panasonic Corporation
International Classes:
H01L31/103; H01S5/323; H01L33/32; H01S5/343
Domestic Patent References:
| JP4192585A |
Other References:
Kentaro ONABE,Unstable Regions in III-V Quaternary Solid Solutions Composition Plane Calculated with Strictly Regular Solution Approximation,JAPANESE JOURNAL OF APPLIED PHYSICS,1982年,Vol.21, No.6,pp.L323-L325
Kentaro ONABE,Immiscibility in Type A1-xBxC1-yDy Strictly Regular Quaternary Solid Solutions. I. Unstable Regions,JAPANESE JOURNAL OF APPLIED PHYSICS,1983年,Vol.22, No.4,pp.663-673
Kentaro ONABE,Immiscibility in Type A1-xBxC1-yDy Strictly Regular Quaternary Solid Solutions. I. Unstable Regions,JAPANESE JOURNAL OF APPLIED PHYSICS,1983年,Vol.22, No.4,pp.663-673
Attorney, Agent or Firm:
Kosaku Sugimura