Title:
ホウ化物単結晶とその製造方法及びそれを利用した半導体層形成用基板
Document Type and Number:
Japanese Patent JP4302927
Kind Code:
B2
Inventors:
Shigeki Otani
Hiroyuki Kinoshita
Hiroyuki Kinoshita
Application Number:
JP2002051578A
Publication Date:
July 29, 2009
Filing Date:
February 27, 2002
Export Citation:
Assignee:
National Institute for Materials Science
Kyocera Corporation
Kyocera Corporation
International Classes:
C30B29/10; C30B13/04
Domestic Patent References:
JP2002043223A | ||||
JP8091995A | ||||
JP10095699A | ||||
JP8104599A | ||||
JP2001049378A | ||||
JP2003089596A | ||||
JP2003104800A | ||||
JP2002348200A |
Attorney, Agent or Firm:
Aoyama Aoi
Hisao Ishii
Hisao Ishii