半導体基板の製造方法 - NEC Electronics Corporation

Title:

半導体基板の製造方法

Document Type and Number:

Japanese Patent JP4302929

Kind Code:

B2

More Like This:

JP3889918	PLASMA ETCHING METHOD, PLASMA ETCHING SYSTEM AND PLASMA PROCESSING SYSTEM
JP3940464	REACTIVE ION ETCHING APPARATUS
JPH0653187	MANUFACTURE OF SEMICONDUCTOR DEVICE

Inventors:

Katsuhiro Inoue

Application Number:

JP2002064779A

Publication Date:

July 29, 2009

Filing Date:

March 11, 2002

Export Citation:

Assignee:

NEC Electronics Corporation

International Classes:

H01L21/302; H01L23/52; H01L21/02; H01L21/3065; H01L27/12; H01L29/786

Domestic Patent References:

Attorney, Agent or Firm:

Mitsuhiro Hamada

Previous Patent: 電圧印加装置

Next Patent: 高耐食性・高強度・高靭性窒化処理Ｍｏ合金加工材とその製造方法