Title:
PLASMA ETCHING METHOD, PLASMA ETCHING SYSTEM AND PLASMA PROCESSING SYSTEM
Document Type and Number:
Japanese Patent JP3889918
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a system for etching a material of low reactivity in the processing of product while reducing adhesion of reaction products to the side wall of a reaction tube made of a dielectric.
SOLUTION: The falling part 33 of a coil antenna 23 is brought close to the outer circumference of a reaction tube 14 in order to establish capacitive coupling and the coil antenna 23 is made to turn along the outer circumference of the reaction tube 14. An ion sheath is formed on the inner wall of the reaction tube 14 through capacitive coupling and almost all ions in plasma move toward a sample 22 and etch the sample. A very small part of ions moves toward the coil antenna 23 and collides against the inner wall of the reaction tube 14. Ions accelerated by the ion sheath formed through capacitive coupling of the coil antenna 23 collide against etching products trying to adhere to the inner wall of the reaction tube 14 thus diffusing the etching products.
Inventors:
Yuichi Tateno
Minoru Suzuki
Koji Ibi
Genichi Komuro
Yoichi Okida
Minoru Suzuki
Koji Ibi
Genichi Komuro
Yoichi Okida
Application Number:
JP2000255549A
Publication Date:
March 07, 2007
Filing Date:
August 25, 2000
Export Citation:
Assignee:
富士通株式会社
株式会社アルバック
株式会社アルバック
International Classes:
C23F4/00; H01L21/3065; H01J37/32; H01L21/302; (IPC1-7): H01L21/3065; C23F4/00
Domestic Patent References:
| JP11097422A | ||||
| JP8306659A | ||||
| JP9237778A | ||||
| JP10152784A |
Attorney, Agent or Firm:
Hironobu Onda
Makoto Onda
Makoto Onda