To form a thin film coil element in a semiconductor device having a spiral thin film coil element without increasing the number of manufacturing processes.

A semiconductor assembly 2 has rewired wiring 14, the spiral thin film coil element 19, first connecting wiring (not shown in the figure), and second connecting wiring 16 on a protective film 9. The inner end of the thin film coil element 19 is connected to one of connection pads 6 for thin film coil element provided on a semiconductor substrate 4 through a columnar electrode 21, third connecting wiring 29 provided on the top surface of an upper insulating film 25, another columnar electrode 22, and second connecting wiring 16. The outer end of the element 19 is connected to the other connection pad for thin film coil element provided on the semiconductor substrate 4 through the first connecting wiring. In this case, the thin film coil element 18 etc., can be formed simultaneously with the rewired wiring 14 and, in addition, the third connecting wiring 29 can be formed simultaneously with upper rewired wiring 28.

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