Title:
検出構造、電荷担体の検出方法および充電を検出するためのONO電界効果トランジスタの利用
Document Type and Number:
Japanese Patent JP4443230
Kind Code:
B2
Abstract:
The invention relates to a detector arrangement (100), a method for the detection of electrical charge carriers and use of an ONO field effect transistor for detection of an electrical charge. The detector arrangement (100) has an ONO field effect transistor embodied on and/or in a substrate (101), for the detection of electrical charge carriers, such that the electrical charge carrier (103) for detection may be introduced into die ONO field effect transistor layer sequence (102), a recording unit (104), coupled to the ONO field effect transistor, for recording an electrical signal characteristic of the amount and/or the charge carrier type for the electrical charge carrier (103) introduced into the ONO layer sequence (102) and an analytical unit for determining the amount and/or the charge carrier type of the electrical charge carrier (103) introduced into the ONO layer sequence (102) from the characteristic electrical signal.
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Inventors:
Knot, bernhard
Georg, Tempel
Georg, Tempel
Application Number:
JP2003577348A
Publication Date:
March 31, 2010
Filing Date:
March 12, 2003
Export Citation:
Assignee:
Infineon Technologies AG
International Classes:
H01L21/822; H01L23/544; H01L21/8247; H01L27/04; H01L29/78; H01L29/788; H01L29/792
Domestic Patent References:
| JP64069025A | ||||
| JP6275591A | ||||
| JP2001291753A | ||||
| JP10284627A | ||||
| JP10284726A | ||||
| JP2002009179A |
Foreign References:
| US5594328 |
Attorney, Agent or Firm:
Kenzo Hara International Patent Office
Kenzo Hara
Ryuichi Kijima
Ichiro Kaneko
Kenzo Hara
Ryuichi Kijima
Ichiro Kaneko