Title:
半導体装置およびその製造方法
Document Type and Number:
Japanese Patent JP4454242
Kind Code:
B2
Abstract:
The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
Inventors:
Junji Noguchi
Takafumi Oshima
Noriko Miura
Kensuke Ishikawa
Iwasaki Fusei
Kiyomi Katsuyama
Tatsuyuki Saito
Go Tamaru
Yamaguchi Hiji
Takafumi Oshima
Noriko Miura
Kensuke Ishikawa
Iwasaki Fusei
Kiyomi Katsuyama
Tatsuyuki Saito
Go Tamaru
Yamaguchi Hiji
Application Number:
JP2003083348A
Publication Date:
April 21, 2010
Filing Date:
March 25, 2003
Export Citation:
Assignee:
Renesas Technology Corp.
International Classes:
H01L21/3205; H01L21/768; H01L21/312; H01L21/314; H01L21/44; H01L23/52; H01L23/522
Domestic Patent References:
| JP2003059923A | ||||
| JP2003017564A | ||||
| JP2004095865A | ||||
| JP2002009150A | ||||
| JP2002343858A |
Foreign References:
| US20030008493 |
Attorney, Agent or Firm:
Yamato Tsutsui