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Patent Searching and Data


Title:
半導体メモリ
Document Type and Number:
Japanese Patent JP4489784
Kind Code:
B2
Inventors:
Shinya Fujioka
Okuyama Yoshiaki
Application Number:
JP2007011197A
Publication Date:
June 23, 2010
Filing Date:
January 22, 2007
Export Citation:
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Assignee:
Fujitsu Microelectronics Limited
International Classes:
G11C11/406; G11C11/401; G11C11/403; G11C11/407
Domestic Patent References:
JP6111568A
JP8129882A
Attorney, Agent or Firm:
Furuya Fumio
Toshihide Mori