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Title:
固体撮像素子及びその製造方法
Document Type and Number:
Japanese Patent JP4551603
Kind Code:
B2
Abstract:

To suppress a height difference between the light receiving surface of a photoelectric conversion element and multi-layer wiring and to suppress the irregular reflection of incident light by the side wall of the multi-layer wiring.

By turning respective wires 115, 117 and 119 of wiring constituting a multi-layer wiring layer respectively into a buried wiring structure formed by forming a wiring groove on a base insulating film by etching and burying a wiring material in the wiring groove, the film thickness of the multi-layer wiring layer is reduced and shading characteristics are improved. Also, cross sections of the buried multi-layer wires 115, 117 and 119 by the wiring groove formed by etching are normally formed into trapezoidal shapes in which upper sides are longer than long lower sides. Thus, in the case that scattered light is made incident on the side wall of the wiring, since it tends to reflect downward and a light quantity reaching a photodiode increases compared to a conventional case, sensor sensitivity is improved.

COPYRIGHT: (C)2003,JPO


Inventors:
Sachiko Miyata
Application Number:
JP2002064610A
Publication Date:
September 29, 2010
Filing Date:
March 11, 2002
Export Citation:
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Assignee:
ソニー株式会社
International Classes:
H01L27/14; H01L27/146; H04N5/335; H04N5/361; H04N5/369; H04N5/372
Domestic Patent References:
JP2001267544A
JP11274157A
JP2001298175A
JP10064995A
JP2000150849A
JP2001237404A
Attorney, Agent or Firm:
Shinto International Patent Office