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Title:
半導体研磨スラリー精製用素材、半導体研磨スラリー精製用モジュールおよび半導体研磨スラリーの精製方法
Document Type and Number:
Japanese Patent JP4644120
Kind Code:
B2
Abstract:
A material for purification of a semiconductor polishing slurry that without changing of pH value, is capable of efficiently purifying a polishing slurry to thereby not only prevent metal contamination of a polished object as effectively as possible but also achieve recycling of a polishing slurry without any problem; a relevant module for purification of a semiconductor polishing slurry; and a process for purifying a semiconductor polishing slurry with the use thereof. In particular, a material for purification of a semiconductor polishing slurry characterized in that it comprises a fibrous substrate having a functional group capable of forming a metal chelate or such a functional group together with hydroxyl fixed onto at least the surface thereof. This material for purification of a semiconductor polishing slurry is, for example, used in such a manner that it is inserted in a container fitted with polishing slurry inflow port and outflow port while ensuring passage of polishing slurry flow.

Inventors:
Tsugu Abe
Nobuyoshi Nanbu
Osamu Ito
Masaaki Ogitsu
Kazuo Inomata
Application Number:
JP2005503737A
Publication Date:
March 02, 2011
Filing Date:
March 18, 2004
Export Citation:
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Assignee:
Nomura Micro Science Co., Ltd.
Maruzen Pharmaceutical Co., Ltd.
Killest Co., Ltd.
Chubu Killest Co., Ltd.
International Classes:
H01L21/304; B01J45/00; B01J47/04; B01J47/10; B01J47/12; B01J47/14; B24B37/00; B24B57/02; C02F11/00; C23F1/46
Domestic Patent References:
JP2004075859A2004-03-11
JPH09314466A1997-12-09
JP2000248467A2000-09-12
JP2001179253A2001-07-03
JPH1110540A1999-01-19
Attorney, Agent or Firm:
Saichi Suyama