To enhance the reliability of a semiconductor integrated circuit device having multiple kinds of field-effect transistors whose gate insulating films have different thicknesses.
A method for manufacturing a semiconductor integrated circuit device having a first field effect transistor Q1 whose gate insulating film is formed on a first device forming region of the main surface of a semiconductor substrate and a second field effect transistor Q2 whose gate insulating film, which has a larger thickness than that of the gate insulating film of the first field effect transistor, is formed on a second device forming region of the main surface of the semiconductor substrate, comprises the steps of: forming thermal oxidation films on the first and second device forming regions of the main surface of the semiconductor substrate; forming a deposited film on the main surface of the semiconductor substrate including the thermal oxidation films; removing the deposited film and the thermal oxidation film on the second device forming region; forming a thermal oxidation film on the second device forming region; and forming gate insulating films on the first and second device forming regions.
COPYRIGHT: (C)2008,JPO&INPIT
| JPS61188800 | SEMICONDUCTOR DEVICE |
| WO/2005/091357 | PROGRAMMABLE LOGIC DEVICE AND ITS DESIGNING METHOD |
Norio Suzuki
Yasuhiro Taniguchi
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