To enhance reliability of a semiconductor integrated circuit device having a plurality of types of field-effect transistors having different gate insulating film thicknesses.
A method of manufacturing a semiconductor integrated circuit device which has a first field-effect transistor Q1 in which a gate insulating film is formed on a first element forming region on a main surface of a semiconductor substrate, and a second field-effect transistor Q2 in which a gate insulating film having a thickness smaller than that of the gate insulating film of the first field-effect transistor is formed on a second element forming region on a main surface of the semiconductor substrate, includes a process of forming thermally oxidized films on the first element forming region and the second element forming region on the main surface of the semiconductor substrate. Next, a deposited film is formed on the main surface of the semiconductor substrate including the thermally oxidized films; subsequently, the deposited film and thermally oxidized film on the second element forming region are removed; and then, a thermally oxidized film is formed on the second element forming region to form gate insulating films on the first element forming region and the second element forming region, respectively.
COPYRIGHT: (C)2007,JPO&INPIT
| JPS63120460 | SEMICONDUCTOR CIRCUIT DEVICE |
| JP2009123981 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| JP6324440 | Semiconductor device |
Norio Suzuki
Yasuhiro Taniguchi
| JP6061499A | ||||
| JP10022397A | ||||
| JP8130250A | ||||
| JP4122063A | ||||
| JP1283872A | ||||
| JP7245267A | ||||
| JP55123133A |