Title:
半導体素子
Document Type and Number:
Japanese Patent JP5184615
Kind Code:
B2
Abstract:
The semiconductor element includes an oxide semiconductor layer on an insulating surface; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; a gate insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer. The source electrode layer and the drain electrode layer have sidewalls which are in contact with a top surface of the oxide semiconductor layer.
Inventors:
Hideomi Suzawa
Kurata
Mayumi Mikami
Kurata
Mayumi Mikami
Application Number:
JP2010268976A
Publication Date:
April 17, 2013
Filing Date:
December 02, 2010
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/28; H01L29/786; H01L21/336; H01L29/41; H01L29/417
Domestic Patent References:
| JP2003309267A |