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Title:
球状半導体粒子の製造方法
Document Type and Number:
Japanese Patent JP5223048
Kind Code:
B2
Abstract:

To enable efficient production of high quality spherical semiconductor particles having a small dispersion of mass and dimension in a method of producing semiconductor particles by melting a predetermined amount of semiconductor powder to form spherical melt particles and cooling these to solidify.

A small lump containing a predetermined amount of semiconductor powder is preliminary heated in an inert atmosphere in a preliminary heating part 43 of a heat treating furnace 41 to a temperature in the proximity of a melting point of the powder and the temperature not reaching the melting one. Then, the small lump is heated in an atmosphere of the inert gas appropriately mixed with oxygen in a melting part 44 at a temperature not lower than a melting point of the powder to form the semiconductor melt particles. The melt particles are cooled in a cooling part 45 to solidify, and thereafter taken out to the outside to recover. As for the small lump, it is preferable to use an article molded to a predetermined form by adding an organic binder to the semiconductor powder.

COPYRIGHT: (C)2010,JPO&INPIT


Inventors:
Youji Oshima
Toshiyuki Nakamura
Yoshihiro Akashi
Murozo Mikio
Application Number:
JP2008306423A
Publication Date:
June 26, 2013
Filing Date:
December 01, 2008
Export Citation:
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Assignee:
Clean Venture 21 Co., Ltd.
International Classes:
C30B29/06; C01B33/02; C30B11/00; H01L31/04
Domestic Patent References:
JP2008239438A
JP2008143754A
JP2001501779A
Foreign References:
WO2008057483A1
US2637855
Attorney, Agent or Firm:
Kazuo Ishii
Shinichi Kawasaki