Title:
半導体素子の製造方法
Document Type and Number:
Japanese Patent JP5573832
Kind Code:
B2
Abstract:
A method for manufacturing a semiconductor element of the present invention, has: a laser irradiation step of focusing a pulsed laser beam inside of a substrate constituting a wafer, thereby forming a plurality of isolated processed portions along an intended dividing line inside of the substrate, and creating a fissure that runs from the processed portions at least to the surface of the substrate and links adjacent processed portions; and a wafer division step of dividing the wafer along the intended dividing line.
Inventors:
a sake -- book Hiroaki
Application Number:
JP2011501541A
Publication Date:
August 20, 2014
Filing Date:
February 04, 2010
Export Citation:
Assignee:
Nichia Chemical Industries Corp.
International Classes:
H01L21/301; B23K26/00; B23K26/046; B23K26/364; B23K26/38; B23K26/40; B23K26/53
Domestic Patent References:
| JP2006294674A | 2006-10-26 | |||
| JP2008098465A | 2008-04-24 | |||
| JP2002192368A | 2002-07-10 | |||
| JP2003338652A | 2003-11-28 | |||
| JP2006294674A | 2006-10-26 | |||
| JP2007317935A | 2007-12-06 |
Attorney, Agent or Firm:
fresh green -- a global IP patent business corporation
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