Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP5609981
Kind Code:
B2
Abstract:
Ineffective chips (22) are formed in the circumference of a semiconductor wafer (1) and effective chips (21) are formed in a region surrounded by the ineffective chips. A front electrode is formed on the effective chips and the ineffective chips and an insulating film (7) is formed on dicing lines (23) which partition the effective chips and the ineffective chips. Polyimide (26) is formed on an outer circumferential portion of the semiconductor wafer with a predetermined width from an outer circumferential end of the semiconductor wafer such that the polyimide continuously covers the ineffective chips from the outer circumferential end of the semiconductor wafer to the inside and continuously covers a portion which is a predetermined distance away from the outer circumferential end of the semiconductor wafer to the effective chip in the dicing line interposed between the ineffective chips. A metal film is formed on the front electrode formed on the effective chips by plating. The semiconductor wafer is cut into semiconductor chips along the dicing lines by a blade.
Inventors:
爲則 啓
Application Number:
JP2012535042A
Publication Date:
October 22, 2014
Filing Date:
September 20, 2011
Export Citation:
Assignee:
富士電機株式会社
International Classes:
H01L21/301
Domestic Patent References:
| JP2005244165A | 2005-09-08 | |||
| JP2007036129A | 2007-02-08 | |||
| JPH05315304A | 1993-11-26 | |||
| JP2007287780A | 2007-11-01 | |||
| JP2006032390A | 2006-02-02 |
Attorney, Agent or Firm:
Akinori Sakai