Title:
少数キャリアの注入が抑制される炭化シリコン接合障壁ショットキーダイオード
Document Type and Number:
Japanese Patent JP5616911
Kind Code:
B2
Abstract:
Integral structures that block the current conduction of the built-in PiN diode in a junction barrier Schottky (JBS) structure are provided. A Schottky diode may be incorporated in series with the PiN diode, where the Schottky diode is of opposite direction to that of the PiN diode. A series resistance or and insulating layer may be provided between the PiN diode and a Schottky contact. Silicon carbide Schottky diodes and methods of fabricating silicon carbide Schottky diodes that include a silicon carbide junction barrier region disposed within a drift region of the diode are also provided. The junction barrier region includes a first region of silicon carbide having a first doping concentration in the drift region of the diode and a second region of silicon carbide in the drift region and disposed between the first region of silicon carbide and a Schottky contact of the Schottky diode. The second region is in contact with the first region of silicon carbide and the Schottky contact. The second region of silicon carbide has a second doping concentration that is less than the first doping concentration.
Inventors:
リュ セイ−ヒョン
アナント ケイ．アガルワル
アナント ケイ．アガルワル
Application Number:
JP2012002273A
Publication Date:
October 29, 2014
Filing Date:
January 10, 2012
Export Citation:
Assignee:
クリー インコーポレイテッドＣＲＥＥ ＩＮＣ．
International Classes:
H01L29/872; H01L29/47
Attorney, Agent or Firm:
Patent business corporation Asamura patent firm
Hiroshi Asamura
Hajime Asamura
Kazuyuki Obinata
Wood 鉐 3
Hiroshi Asamura
Hajime Asamura
Kazuyuki Obinata
Wood 鉐 3