Title:
光センサ、および光センサアレイ
Document Type and Number:
Japanese Patent JP5661399
Kind Code:
B2
Abstract:
A photosensor includes a lower electrode formed of a metal film, an amorphous silicon film disposed on the lower electrode, an n-type amorphous silicon film disposed on the amorphous silicon film, an upper electrode that is disposed on the n-type amorphous silicon film, and receives a first reference voltage, a capacitive element connected between the lower electrode and a second reference voltage, a switch circuit that inputs a first supply voltage to the lower electrode in an on-state, and puts the lower electrode into a floating state in an off-state, and a detector circuit that detects a voltage change in the lower electrode after irradiating the amorphous silicon film for a given period with light when the switch circuit is on.
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Inventors:
宮沢 敏夫
長谷川 篤
齋藤 輝児
安田 好三
米倉 健史
長谷川 篤
齋藤 輝児
安田 好三
米倉 健史
Application Number:
JP2010216707A
Publication Date:
January 28, 2015
Filing Date:
September 28, 2010
Export Citation:
Assignee:
株式会社ジャパンディスプレイ
パナソニック液晶ディスプレイ株式会社
パナソニック液晶ディスプレイ株式会社
International Classes:
H01L31/0248; H01L27/146
Attorney, Agent or Firm:
Patent business corporation far international patent firm
Shuki Akita
Keiichi Konno
Shuki Akita
Keiichi Konno
Patent business corporation far international patent firm
Shuki Akita
Keiichi Konno
Shuki Akita
Keiichi Konno
Patent business corporation far international patent firm