Title:
スイッチング素子
Document Type and Number:
Japanese Patent JP5720582
Kind Code:
B2
Abstract:
In a switching element, a first region that is exposed on an upper surface of a semiconductor substrate, a second region that is exposed on the upper surface of the substrate and extends to below the first region, and a third region that is formed below the second region, are formed on the substrate. A trench is formed in the upper surface of the substrate. A gate electrode has a first portion that extends from a depth of the first region to a depth of the third region at at least a portion in the trench formed in an area where the first region is exposed, and a second portion that is formed to a depth of the second region, and does not reach the depth of the third region, at at least a portion in the trench formed in an area where the second region is exposed.
Inventors:
Tomohiko Sato
Application Number:
JP2012003876A
Publication Date:
May 20, 2015
Filing Date:
January 12, 2012
Export Citation:
Assignee:
TOYOTA JIDOSHA KABUSHIKI KAISHA
International Classes:
H01L29/78; H01L29/739
Domestic Patent References:
| JP2005510880A | ||||
| JP2005011965A |
Attorney, Agent or Firm:
Kaiyu International Patent Office