Title:
ＥＵＶ露光用マスクの修正方法およびＥＵＶ露光用マスク
Document Type and Number:
Japanese Patent JP5742389
Kind Code:
B2
Abstract:
A method for repairing a mask for EUV exposure, which includes: a Mo/Si multi-layer film including a molybdenum layer and a silicon layer and being deposited on a substrate; a protection film formed on the Mo/Si multi-layer film; and a absorption film formed on the protection film, includes: specifying a position of a defect of the Mo/Si multi-layer film in an exposed area of the protection film where the protection film is exposed from the absorption film; and irradiating light beam, of which a diameter is narrowed down to be or less than a wavelength of EUV exposure light, onto an area covering the position of the defect in a plan view of the mask for EUV exposure to form a plurality of holes on a top surface of the mask for EUV exposure, the maximum width of the holes being equal to or less than the wavelength.
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Inventors:
Matthew Lamancha
Application Number:
JP2011080112A
Publication Date:
July 01, 2015
Filing Date:
March 31, 2011
Export Citation:
Assignee:
Toppan Printing Co., Ltd.
International Classes:
H01L21/027; G03F1/24; G03F1/74
Domestic Patent References:
| JP2010034129A | ||||
| JP2009010373A | ||||
| JP2006060059A | ||||
| JP2004510343A |
Attorney, Agent or Firm:
Shiro Suzuki
Masatake Shiga
Tadashi Takahashi
Shunsuke Fushimi
Masatake Shiga
Tadashi Takahashi
Shunsuke Fushimi