Title:
蓄電装置の作製方法
Document Type and Number:
Japanese Patent JP5780852
Kind Code:
B2
Abstract:
It is an object to improve performance of a power storage device, such as cycle characteristics. A power storage device includes a current collector and a crystalline semiconductor layer including a whisker, which is formed on and in close contact with the current collector. Separation of the crystalline semiconductor layer is suppressed by an increase of adhesion, whereby cycle characteristics in which a specific capacity of a tenth cycle number with respect to a first cycle number is greater than or equal to 90% is realized. In addition, cycle characteristics in which a specific capacity of a hundredth cycle number with respect to a first cycle number is greater than or equal to 70% is realized.
Inventors:
Kuriki Kazuki
Michiko Konishi
Asami Tadokoro
Yasunori Yoshida
Kiyofumi Ogino
Toshihiko Takeuchi
Michiko Konishi
Asami Tadokoro
Yasunori Yoshida
Kiyofumi Ogino
Toshihiko Takeuchi
Application Number:
JP2011141333A
Publication Date:
September 16, 2015
Filing Date:
June 27, 2011
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01M4/1395; H01G11/86; H01M4/134; H01M4/38; H01M4/64; H01M4/66; H01M10/052
Domestic Patent References:
| JP2004533699A | ||||
| JP2008512838A | ||||
| JP2004171875A | ||||
| JP2008522360A |
Foreign References:
| WO2009038897A1 |