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Title:
スピントロニクス素子およびその製造方法、ならびに磁気読み取りヘッドおよびその製造方法
Document Type and Number:
Japanese Patent JP5840739
Kind Code:
B2
Abstract:
The performance of an MR device has been improved by inserting one or more Magneto-Resistance Enhancing Layers (MRELs) into approximately the center of one or more of the magnetic layers such as an inner pinned (AP1) layer, spin injection layer (SIL), field generation layer (FGL), and a free layer. An MREL is a layer of a low band gap, high electron mobility semiconductor such as ZnO or a semimetal such as Bi. The MREL may further comprise a first conductive layer that contacts a bottom surface of the semiconductor or semimetal layer, and a second conductive layer that contacts a top surface of the semiconductor or semimetal layer.

Inventors:
Zhang Ryo
Lee Min
Zhou Utatsu
Application Number:
JP2014130590A
Publication Date:
January 06, 2016
Filing Date:
June 25, 2014
Export Citation:
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Assignee:
Headway Technologies, Inc.
International Classes:
G11B5/39; H01L29/82
Domestic Patent References:
JP2002208744A
JP2006344728A
JP2003008102A
Attorney, Agent or Firm:
Patent Business Corporation Tsubasa International Patent Office