Title:
光起電力素子及びその製造方法
Document Type and Number:
Japanese Patent JP5841231
Kind Code:
B2
Abstract:
Provided is a photovoltaic device prepared with a semiconductor including a localized level or an intermediate band in a forbidden band and capable of improving the performance than before. The photovoltaic device includes a plurality of first layers made of a first semiconducting material and a plurality of second layers made of a second semiconducting material that is different from the first semiconducting material, wherein the second semiconducting material includes a localized level or intermediate band in a forbidden band, the first layers and the second layers are alternately laminated one by one, at least two of the second layers are each disposed between a pair of the first layers, and a thickness of each of the second layers is thinner than a thickness of four molecular layers of the first semiconducting material.
Inventors:
Daisuke Sato
Hiroyuki Yaguchi
Shuhei Yagi
Hiroyuki Yaguchi
Shuhei Yagi
Application Number:
JP2014501949A
Publication Date:
January 13, 2016
Filing Date:
May 15, 2012
Export Citation:
Assignee:
TOYOTA JIDOSHA KABUSHIKI KAISHA
Saitama University
Saitama University
International Classes:
H01L31/0352
Domestic Patent References:
| JP2005332945A | ||||
| JP201177474A |
Foreign References:
| WO2007063102A1 | ||||
| WO2009011338A1 | ||||
| US6150604 |
Attorney, Agent or Firm:
Noriyuki Yamamoto
Kishimoto Tatsuto
Kishimoto Tatsuto