Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
室温金属直接ボンディング
Document Type and Number:
Japanese Patent JP5851917
Kind Code:
B2
Abstract:
A bonded device structure including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads formed by contact bonding of the first non-metallic region to the second non-metallic region. At least one of the first and second substrates may be elastically deformed.

Inventors:
Chin-Lee Tong
Paul M. Enquirt
Anthony Scott Rose
Application Number:
JP2012090162A
Publication Date:
February 03, 2016
Filing Date:
April 11, 2012
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
Gyptronics Incorporated
International Classes:
H01L21/02; H01L21/3205; H01L21/60; H01L21/768; H01L21/98; H01L23/522
Domestic Patent References:
JP2002026123A
JP7066093A
Foreign References:
WO2001061743A1
Attorney, Agent or Firm:
Kurata Masatoshi
Satoshi Kono
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Toshio Shirane
Sadao Muramatsu



 
Previous Patent: 半導体装置

Next Patent: GAS ADSORBING TOWER