半導体装置 - Toshiba Corporation

Title:

半導体装置

Document Type and Number:

Japanese Patent JP6448513

Kind Code:

B2

Abstract:

PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce on-resistance.SOLUTION: A semiconductor device according to an embodiment has a first electrode, a first conductivity type first semiconductor region, a second conductivity type second semiconductor region, a first conductivity type third semiconductor region, a second conductivity type fourth semiconductor region, a second conductivity type fifth semiconductor region, an insulation part, a first conductivity type sixth semiconductor region, a second conductivity type seventh semiconductor region, a gate electrode, a gate insulation layer, a second electrode and a third electrode. The insulation part is provided between the second semiconductor region and the fifth semiconductor region, and between the third semiconductor region and the fifth semiconductor region. The second electrode is provided on the seventh semiconductor region and electrically connected with the seventh semiconductor region. The third electrode is provided on the third semiconductor region and electrically connected with the third semiconductor region and the gate electrode.SELECTED DRAWING: Figure 1

Inventors:

Wataru Saito

Application Number:

JP2015223872A

Publication Date:

January 09, 2019

Filing Date:

November 16, 2015

Export Citation:

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