Title:
成膜装置
Document Type and Number:
Japanese Patent JP6479560
Kind Code:
B2
Abstract:
A film forming method for forming a nitride film on a workpiece substrate accommodated within a process vessel, including: performing a first reaction of supplying a first precursor gas to the workpiece substrate accommodated within the process vessel; performing a second reaction of supplying a second precursor gas to the workpiece substrate accommodated within the process vessel; performing a modification of generating plasma of a modifying gas just above the workpiece substrate by supplying the modifying gas into the process vessel and supplying microwaves from an antenna into the process vessel, and plasma-processing, by the plasma thus generated, a surface of the workpiece substrate subjected to the first and second reactions using the first and second precursor gases.
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Inventors:
Noriaki Fukiage
Iwasaki Seiei
Toyohiro Kamata
Ryosuke Ebihara
Masanobu Inoshita
Iwasaki Seiei
Toyohiro Kamata
Ryosuke Ebihara
Masanobu Inoshita
Application Number:
JP2015094143A
Publication Date:
March 06, 2019
Filing Date:
May 01, 2015
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/318; C23C16/42; C23C16/455; C23C16/511; H01L21/31
Domestic Patent References:
| JP2015510263A | ||||
| JP2014146786A | ||||
| JP2011238894A | ||||
| JP2014143416A | ||||
| JP2014093226A | ||||
| JP2013168437A | ||||
| JP2010056477A | ||||
| JP2015228391A | ||||
| JP2006517517A |
Foreign References:
| WO2013054655A1 |
Attorney, Agent or Firm:
Hiroaki Sakai