Title:
ＳｉＣ単結晶の製造方法
Document Type and Number:
Japanese Patent JP6598111
Kind Code:
B2
Inventors:
Toshinori Taishi
Application Number:
JP2015193699A
Publication Date:
October 30, 2019
Filing Date:
September 30, 2015
Export Citation:
Assignee:
Shinshu University
International Classes:
C30B29/36; C30B19/02
Domestic Patent References:
| JP2015110501A |