Title:
半導体装置及び記録装置
Document Type and Number:
Japanese Patent JP6608269
Kind Code:
B2
Abstract:
A semiconductor device includes, an anti-fuse element, a transistor connected via the anti-fuse element to a power source terminal which may apply a voltage to the anti-fuse element, an ESD protection element connected to the power source terminal via a node, and a first resistive element disposed in an electric path between the node and the anti-fuse element, wherein resistance of the first resistive element increases with an increase of a voltage applied to the first resistive element.
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Inventors:
Kazushige Fujii
Toshio Negishi
Toshio Negishi
Application Number:
JP2015249092A
Publication Date:
November 20, 2019
Filing Date:
December 21, 2015
Export Citation:
Assignee:
Canon Inc
International Classes:
H01L21/822; B41J2/05; B41J2/14; G11C17/14; H01L21/82; H01L21/8238; H01L27/04; H01L27/06; H01L27/092
Domestic Patent References:
| JP2014058130A | ||||
| JP2008235612A | ||||
| JP2008054280A | ||||
| JP2014022560A | ||||
| JP2011183786A | ||||
| JP11354649A |
Attorney, Agent or Firm:
Takuma Abe
Sogo Kuroiwa
Sogo Kuroiwa