Title:
半導体装置
Document Type and Number:
Japanese Patent JP6795631
Kind Code:
B2
Abstract:
A highly reliable transistor which includes an oxide semiconductor and has high field-effect mobility and in which a variation in threshold voltage is small is provided. By using the transistor, a high-performance semiconductor device, which has been difficult to realize, is provided. The transistor includes an oxide semiconductor film which contains two or more kinds, preferably three or more kinds of elements selected from indium, tin, zinc, and aluminum. The oxide semiconductor film is formed in a state where a substrate is heated. Further, oxygen is supplied to the oxide semiconductor film with an adjacent insulating film and/or by ion implantation in a manufacturing process of the transistor, so that oxygen deficiency which generates a carrier is reduced as much as possible. In addition, the oxide semiconductor film is highly purified in the manufacturing process of the transistor, so that the concentration of hydrogen is made extremely low.
Inventors:
Noda Kosei
Shunpei Yamazaki
Tatsuya Honda
Yusuke Sekine
Hiroyuki Tomatsu
Shunpei Yamazaki
Tatsuya Honda
Yusuke Sekine
Hiroyuki Tomatsu
Application Number:
JP2019003977A
Publication Date:
December 02, 2020
Filing Date:
January 14, 2019
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; H01L21/336; H01L21/8242; H01L27/108; H01L27/1156; H01L29/788; H01L29/792
Domestic Patent References:
| JP2003045889A | ||||
| JP2011061102A | ||||
| JP2008060419A | ||||
| JP8288519A | ||||
| JP2006287084A | ||||
| JP2000286423A | ||||
| JP2008235873A | ||||
| JP5175231A | ||||
| JP2005228819A | ||||
| JP2008270759A |
Foreign References:
| US20090256151 | ||||
| US20100006851 |