Title:
炭化珪素半導体装置および炭化珪素半導体装置の評価方法
Document Type and Number:
Japanese Patent JP6809208
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device and a silicon carbide semiconductor device evaluation method, which can reduce cost and a manufacturing time.SOLUTION: A silicon carbide semiconductor device comprises an evaluation element manufactured on an epitaxial substrate 10 where a dislocation conversion layer 5, an emitting layer 7, a recombination enhancement layer 6 and an n type silicon carbide layer 2 are sequentially and epitaxially grown on an ntype silicon carbide substrate 1. The evaluation element includes a diode structure formed by pn junction between the n type silicon carbide layer 2 and a ptype region 3 provided inside the n type silicon carbide layer 2. The emitting layer 7 is an ntype silicon carbide layer to emit light of a predetermined wavelength different from wavelengths of layers and regions which compose the epitaxial substrate 10 other than the emitting layer 7 by an EL phenomenon. Forward bias is applied to the diode structure of the evaluation element and light emitted from a window opening part of an evaluation electrode is subjected to spectra analysis and when emission spectrum of the predetermined wavelength of the emitting layer 7 is detected, it is determined that the recombination enhancement layer 6 does not function.SELECTED DRAWING: Figure 1
Inventors:
Maki Miyazato
Miyajima Masaaki
Lu Minya
Takeshi Tales
Miyajima Masaaki
Lu Minya
Takeshi Tales
Application Number:
JP2016248937A
Publication Date:
January 06, 2021
Filing Date:
December 22, 2016
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L21/66; H01L29/861; H01L29/868
Domestic Patent References:
| JP2017085047A | ||||
| JP2009088223A | ||||
| JP2007318031A |
Attorney, Agent or Firm:
Akinori Sakai