Title:
半導体装置
Document Type and Number:
Japanese Patent JP6812520
Kind Code:
B2
Abstract:
A semiconductor device includes a dual-gate transistor in which an oxide semiconductor film is provided between a first gate electrode and a second gate electrode. In the channel width direction of the transistor, a side surface of each of the first and second gate electrodes is on the outer side of a side surface of the oxide semiconductor film. The first or second gate electrode faces the side surface of the oxide semiconductor film with the gate insulating film provided between the first or second gate electrode and the oxide semiconductor film.
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Inventors:
Shunpei Yamazaki
Masahiko Hayakawa
Daisuke Matsubayashi
Masahiko Hayakawa
Daisuke Matsubayashi
Application Number:
JP2019156461A
Publication Date:
January 13, 2021
Filing Date:
August 29, 2019
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; G02F1/1368; H01L21/336
Domestic Patent References:
| JP2013035740A | ||||
| JP2012033908A | ||||
| JP2011139051A | ||||
| JP2012068597A | ||||
| JP2013084944A | ||||
| JP2012134475A | ||||
| JP2011086923A |