Title:
電気光学偏向器
Document Type and Number:
Japanese Patent JP6814443
Kind Code:
B2
Abstract:
To provide an electro-optical deflector preventing a deflection angle from affecting lens effect when a bias voltage is applied to a KTN crystal overlapped with a sweep voltage, and having an in-line property in which an emission beam is on the extension line of an incident beam when the sweep voltage is zero.SOLUTION: An incident beam 101 transmits through a first KTN crystal 102 and a second KTN crystal 103 to be an emission beam 104. An optical system including a first convex lens 118 and a second convex lens 119 is inserted between the first KTN crystal 102 and the second KTN crystal 103, a deflection center 105 of the first KTN crystal 102 on the emission side is imaged on a deflection center 106 of the second KTN crystal 103 on the incident side by line magnification of -1. Positive electrodes 108, 110 are connected to a bias voltage source 111 via inductors 116, 117, and to the sweep voltage source 112 through a distributor 113 via coupling capacities 114, 115, and a common bias voltage and sweep voltage with reversed phases to one another are overlapped and applied.SELECTED DRAWING: Figure 1
Inventors:
Seiji Toyota
Tadashi Sakamoto
Chen Akira
Kazunori Naganuma
Junji Yumoto
Tadashi Sakamoto
Chen Akira
Kazunori Naganuma
Junji Yumoto
Application Number:
JP2018001390A
Publication Date:
January 20, 2021
Filing Date:
January 09, 2018
Export Citation:
Assignee:
Nippon Telegraph and Telephone Corporation
National University Corporation Tokyo University
National University Corporation Tokyo University
International Classes:
G02F1/29
Domestic Patent References:
| JP2016045430A | ||||
| JP2012150409A | ||||
| JP2016014793A |
Foreign References:
| US20080204858 |
Attorney, Agent or Firm:
Patent Business Corporation Tani/Abe Patent Office
Previous Patent: ボロメータ型テラヘルツ波検出素子およびボロメータ型テラヘルツ波検出...
Next Patent: セルロースナノファイバーの製造装置及びセルロースナノファイバーの製...
Next Patent: セルロースナノファイバーの製造装置及びセルロースナノファイバーの製...