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Title:
基板加工方法および基板加工装置
Document Type and Number:
Japanese Patent JP6851040
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a substrate processing method and a substrate processing apparatus for processing a processing object crystal substrate into a processing layer containing substrate for obtaining a crack-free hollow crystal substrate.SOLUTION: A first process is performed for arranging laser condensing means 12, capable of adjusting aberration correction, on an irradiation target face of a processing object crystal substrate 20a. A second process is performed for processing the processing object crystal substrate 20a into a processing layer containing substrate 20c by changing a condensation position Bf of laser light B in a peripheral direction and a thickness direction of the hollowing object part 20b of the processing object crystal substrate 20a while condensing the laser light B in the same. In the second process, in the processing object crystal substrate 20a and in a vicinity of at least one processing object crystal substrate face, the aberration correction of the laser condensing means 12 is adjusted so that a processing trace 22c growing at the condensation position Bf of the laser light B may not extend along a crystal orientation of the processing object crystal substrate 20a.SELECTED DRAWING: Figure 2

Inventors:
Junichi Ikeno
Yohei Yamada
Hideki Suzuki
Rika Matsuo
Application Number:
JP2016215250A
Publication Date:
March 31, 2021
Filing Date:
November 02, 2016
Export Citation:
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Assignee:
Saitama University
Shin-Etsu Polymer Co., Ltd.
International Classes:
B23K26/53; B23K26/046; B23K26/064; B28D5/00; B28D5/04; H01L21/304
Domestic Patent References:
JP2011206838A
JP2015123465A
JP2013158778A
JP2007165848A
JP2010024064A
JP2003010988A
Foreign References:
WO2012108054A1
Attorney, Agent or Firm:
Hidekazu Miyoshi
Shunichi Takahashi
Masakazu Ito
Toshio Takamatsu