Title:
二次元材料を製造するための化学蒸着方法
Document Type and Number:
Japanese Patent JP6934020
Kind Code:
B2
Abstract:
A method of synthesis of two-dimensional metal chalcogenide monolayers, such as WSe2 and MoSe2, is based on a chemical vapor deposition approach that uses H2Se or alkyl or aryl selenide precursors to form a reactive gas. The gaseous selenium precursor may be introduced into a tube furnace containing a metal precursor at a selected temperature, wherein the selenium and metal precursors react to form metal chalcogenide monolayers.
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Inventors:
Picket, nigel
Masala, ombreta
Subjani, Nicky Pravdas
Masala, ombreta
Subjani, Nicky Pravdas
Application Number:
JP2018559800A
Publication Date:
September 08, 2021
Filing Date:
May 12, 2017
Export Citation:
Assignee:
Nanoco Technologies Limited
International Classes:
C01B19/04; C23C16/30; H01L21/205
Domestic Patent References:
| JP7086186A | ||||
| JP2009274949A | ||||
| JP2011518951A | ||||
| JP2009531535A |
Foreign References:
| WO2015126087A1 | ||||
| US20150118487 |
Other References:
SARAH M EICHFELD; ET AL,HIGHLY SCALABLE, ATOMICALLY THIN WSE 2 GROWN VIA METAL-ORGANIC CHEMICAL VAPOR DEPOSITION,ACS NANO,米国,AMERICAN CHEMICAL SOCIETY,2015年01月27日,VOL:9, NR:2,PAGE(S):2080 - 2087,http://dx.doi.org/10.1021/nn5073286
NICOLAS D BOSCHER; ET AL,ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION OF WSE 2 THIN FILMS ON GLASS-HIGHLY 以下備考,JOURNAL OF MATERIALS CHEMISTRY,英国,ROYAL SOCIETY OF CHEMISTRY,2005年11月25日,VOL:16, NR:1,PAGE(S):122 - 127,http://dx.doi.org/10.1039/B514440J,HYDROPHOBIC STICKY SURFACES
BOSCHER N D; ET AL,ATMOSPHERIC PRESSURE CHEMICAL VAPOUR DEPOSITION OF NBSE2-TISE2 COMPOSITE THIN FILMS,APPLIED SURFACE SCIENCE,NL,ELSEVIER,2009年12月04日,VOL:256, NR:10,PAGE(S):3178 - 3182,http://dx.doi.org/10.1016/j.apsusc.2009.12.002
N D BOSCHER; ET AL,ATMOSPHERIC PRESSURE CHEMICAL VAPOUR DEPOSITION OF VANADIUM DISELENIDE THIN FILMS,APPLIED SURFACE SCIENCE,NL,ELSEVIER,2007年04月19日,VOL:253, NR:14,PAGE(S):6041 - 6046,http://dx.doi.org/10.1016/j.apsusc.2007.01.002
NICOLAS D BOSCHER; ET AL,ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION OF WSE 2 THIN FILMS ON GLASS-HIGHLY 以下備考,JOURNAL OF MATERIALS CHEMISTRY,英国,ROYAL SOCIETY OF CHEMISTRY,2005年11月25日,VOL:16, NR:1,PAGE(S):122 - 127,http://dx.doi.org/10.1039/B514440J,HYDROPHOBIC STICKY SURFACES
BOSCHER N D; ET AL,ATMOSPHERIC PRESSURE CHEMICAL VAPOUR DEPOSITION OF NBSE2-TISE2 COMPOSITE THIN FILMS,APPLIED SURFACE SCIENCE,NL,ELSEVIER,2009年12月04日,VOL:256, NR:10,PAGE(S):3178 - 3182,http://dx.doi.org/10.1016/j.apsusc.2009.12.002
N D BOSCHER; ET AL,ATMOSPHERIC PRESSURE CHEMICAL VAPOUR DEPOSITION OF VANADIUM DISELENIDE THIN FILMS,APPLIED SURFACE SCIENCE,NL,ELSEVIER,2007年04月19日,VOL:253, NR:14,PAGE(S):6041 - 6046,http://dx.doi.org/10.1016/j.apsusc.2007.01.002
Attorney, Agent or Firm:
Maruyama International Patent Office