Title:
シリコン窒化膜の製造方法
Document Type and Number:
Japanese Patent JP7436982
Kind Code:
B2
Abstract:
A method for preparing a silicon nitride film with a high deposition rate and a reduced damage to the substrate and/or the underlying layer formed under the silicon nitride film. The method for preparing a silicon nitride film contains the steps of irradiating a nitride with an ultraviolet light, and contacting the nitride irradiated with the ultraviolet light and a hydrogenated cyclic silane represented by a general formula SinH2n, wherein n is 5, 6, or 7.
Inventors:
Akinobu Teramoto
Yoshinobu Shiba
Go Abe
Akira Nishimura
Yoshinobu Shiba
Go Abe
Akira Nishimura
Application Number:
JP2020036587A
Publication Date:
February 22, 2024
Filing Date:
March 04, 2020
Export Citation:
Assignee:
Tohoku University
Nippon Shokubai Co., Ltd.
Nippon Shokubai Co., Ltd.
International Classes:
H01L21/318; C23C16/42; C23C16/48; H01L21/31
Domestic Patent References:
| JP61112314A | ||||
| JP60218838A | ||||
| JP60218827A | ||||
| JP2007302958A | ||||
| JP2015510263A | ||||
| JP7267621A | ||||
| JP7254556A | ||||
| JP8032085A |
Attorney, Agent or Firm:
Patent Attorney Corporation ASFI International Patent Office