Title:
【発明の名称】▲III▼―▲V▼族半導体装置のP型領域へ電極を形成する方法
Document Type and Number:
Japanese Patent JPH0797569
Kind Code:
B2
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| JPH02272770 | SEMICONDUCTOR DEVICE |
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Inventors:
Shiban Kay. Take
Application Number:
JP18438285A
Publication Date:
October 18, 1995
Filing Date:
August 23, 1985
Export Citation:
Assignee:
Texas Instruments Incorporated
International Classes:
H01L29/43; H01L21/225; H01L21/28; H01L21/331; H01L29/72; H01L29/73; (IPC1-7): H01L21/28; H01L21/225
Domestic Patent References:
| JP5911721A | ||||
| JP49130190A |
Other References:
ＡｐｐｌｉｅｄＰｈｙｓｉｃｓＬｅｔｔｅｒｓ，Ｖｏｌ．４３，Ｎｏ．５，（１９８３），ＰＰ．５０５−５０７
ＡｐｐｌｉｅｄＰｈｙｓｉｃｓＬｅｔｔｅｒｓ，Ｖｏｌ．４８，Ｎｏ．６，Ｆｅｂ．１９８６，ＰＰ．４１５−４１６
ＡｐｐｌｉｅｄＰｈｙｓｉｃｓＬｅｔｔｅｒｓ，Ｖｏｌ．４８，Ｎｏ．６，Ｆｅｂ．１９８６，ＰＰ．４１５−４１６
Attorney, Agent or Firm:
Akira Asamura (2 outside)
Next Patent: 半導体装置の製造方法