PURPOSE: To obtain the hybrid IC having high performance at low cost by a method wherein after resistant paste is printed on an insulating substrate and is baked, an evaporated film of Cu, etc., is provided to form wiring electrodes or capacitive electrodes without using a noble metal.

CONSTITUTION: Paste of RuO4 is printed on the ceramic substrate 1, and is baked to form resistors 2a∼2f. Cu is evaporated on the whole surface, etching is performed to form wirings 3a∼3h to conduct to the resistors 2a∼2f, and the connecting parts of lead terminals, transistors, capacitive electrodes, etc., are formed. An SiO2 thin film 4 is stacked thereon masking the connecting parts thereof, moreover a mask 5 having openings 5a, 5b is applied, and Cu is evaporated to form capacitive electrodes 3i, 3j. The electrode 3i is conducted to the wiring 3e-2, and forms a capacitor 6 in regard to the electrode 3d-2 through the film 4. The electrode 3j is conducted to the wiring 3f-2, and forms a capacitor 7 the same facing with the electrode 3c-2. Then the transistors 8, 9 are soldered at the prescribed position, leads are soldered, and resin sealing is performed. When the wirings and the electrodes are evaporated using the base metal like this after formation of the resistors, variation of the characteristics of the resistors is also small.