Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
Japanese Patent JPS58128097
Kind Code:
A
Abstract:

PURPOSE: To decrease the dependancy of selective pattern of the operating characteristics and to simplify the test, by accessing a storage cell of a designated address after accessing the storage cell of a specific address.

CONSTITUTION: An address latch section 1 outputs a set of an address of a cell selected for data read/write with an address latch lock ALC and a set signal setting a fixed address of a specific cell to be passed through without fail sequentially and transmits them to an address gate decoder section 2. The section 2 decodes the said one set of selection address and fixed address and gives them to a storage cell array section 3. The section 3 consists of a pluraity of storage cells and a sense amplification section 4 amplifies data signal read from the section 3 and gives the signal to an output latch section 5. The section 5 latches the amplified data at the section 4 from an output latch clock OLC.


Inventors:
TANAKA MIKI
OOAMI KAZUO
Application Number:
JP21481681A
Publication Date:
July 30, 1983
Filing Date:
December 29, 1981
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
FUJITSU LTD
International Classes:
G11C11/413; G11C7/22; G11C8/00; G11C8/10; G11C11/41; G11C29/08; G11C29/10; H01L27/10; (IPC1-7): G11C11/34; G11C29/00; H01L27/10
Attorney, Agent or Firm:
Aoki Akira



 
Previous Patent: JPS58128096

Next Patent: TEST METHOD FOR READ ONLY MEMORY ELEMENT