Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS58155739
Kind Code:
A
Abstract:
PURPOSE:To manufacture the semiconductor device with highly reliable wirings by a method wherein, when semiconductor regins are separated into multiple island regions by grooves, the polyimido region is embedded into the grooves to extend wirings thereon. CONSTITUTION:N2 ions are implanted into the surface layer of P type Si substrate 1 to form an Si3N4 film 4 by annealing to be followed and N<+> type layer 3 and N typ layer 4 are laminated on the thin substrate 1 located on this side for epitaxial growth. Next the surface of layer 4 only is heat treated to change it into SiO2 film 5 providing openings thereon to form island regions shaping V type grooves reducing the films by means of anisotropic etching. Then, an SiO2 film 6 is produced on the entire surface to form P type base region 7, N<+> type emitter region 8, N<+> type collector contact region 9 in each island region by means of mask diffusion process further forming polyimido resin layer 10 on the entire surface filling said grooves. After said procedures, specified parts are opened to fix base electrode B, collector electrode C and emitter electrode E to respective region.
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Inventors:
INABA TOORU
Application Number:
JP3072383A
Publication Date:
September 16, 1983
Filing Date:
February 28, 1983
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L27/00; H01L21/02; H01L21/312; H01L21/762; H01L27/12; (IPC1-7): H01L21/265; H01L21/312
Attorney, Agent or Firm:
Akio Takahashi
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