Title:
MANUFACTURE OF SEMICONDUCTOR RADIATION RAY DETECTOR
Document Type and Number:
Japanese Patent JPS58180068
Kind Code:
A
Abstract:
PURPOSE:To shorten the manufacturing time as well as to reduce the cost of manufacture of the titled detector by a method wherein a metal plating is performed after a groove cutting work has been performed on a semiconductor substrate, and then a plurality of unit detecting regions are formed by fusing and filling a metal, having a high shielding power for radiation rays, into the groove. CONSTITUTION:The groove cutting work is performed on an n-Si semiconductor substrate 9, an electroless plating is performed on the entire semiconductor substrate, and an Ni film 10 is adhered. Then, unnecessary Pb-Sn and an Ni film are removed and shaped up by performing grinding and chemical etching after a Pb- Sn alloy 11 has been fused and filled in the groove, and an Al vapor- deposited film 12 as an ohmic electrode and an Au vapor-deposited film 13 as an isolation signal electrode are formed.
Inventors:
NARUSE YUUJIROU
SEKIMURA MASAYUKI
NAKAMURA KISAKU
SHIROMIZU SHIYUNJI
YOSHIDA OKIO
SEKIMURA MASAYUKI
NAKAMURA KISAKU
SHIROMIZU SHIYUNJI
YOSHIDA OKIO
Application Number:
JP6173082A
Publication Date:
October 21, 1983
Filing Date:
April 15, 1982
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
G01T1/24; H01L31/09; (IPC1-7): H01L31/00
Attorney, Agent or Firm:
Noriyuki Noriyuki