Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS58180069
Kind Code:
A
Abstract:
PURPOSE:To simplify not only the parallel connection of a plurality of photoelectrical generating region on the same substrate surface but also the series connection thereon by a method wherein a flexible insulating material layer, having an excellent heat-resisting property,is applied on the substrate, thereby a plane surface is formed. CONSTITUTION:A plane-surfaced polyimide-isoindologuinazolinedione (PI resin) film 5 is formed on a non-mirror-faced metal substrate 4 using a coating method. Then, aluminum or chromium, to be turned to a lower electrode 6, is vapor- deposited on the PI resin film 5. Besides, an N type amorphous silicon layer 7, an i-type amorphous silicon layer 8 and a P type amorphous silicon layer 9 are formed on a lower electrode 6 respectively, and lastly, ITO (In2O2-SnO2) film is formed as a transparent electrode 10 by performing an EB vapor-deposition method, thereby enabling to obtain a solar battery.
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Inventors:
MATSUBARA SUNAO
SHIMADA JIYUICHI
SAIKI ATSUSHI
SHIMADA JIYUICHI
SAIKI ATSUSHI
Application Number:
JP6176582A
Publication Date:
October 21, 1983
Filing Date:
April 15, 1982
Export Citation:
Assignee:
KOGYO GIJUTSUIN
International Classes:
H01L31/04; H01L31/0392; (IPC1-7): H01L31/04