Title:
磁気抵抗効果素子及び磁気メモリ
Document Type and Number:
Japanese Patent JPWO2019138778
Kind Code:
A1
Abstract:
高い熱安定性指数Δと低い書き込み電流ＩCの特性を両立させるＸタイプの３端子型ＳＴＴ−ＭＲＡＭ（スピン軌道トルク磁化反転素子）を提供する。磁気抵抗効果素子は、チャネル層（１）／障壁層非隣接磁性層（２ｂ）／障壁層隣接磁性層（２ａ）／障壁層（３）の構成を備える。
Inventors:
Hideo Sato
Shinya Ishikawa
Fukami Shunsuke
Hideo Ohno
Tetsuro Endo
Shinya Ishikawa
Fukami Shunsuke
Hideo Ohno
Tetsuro Endo
Application Number:
JP2019564353A
Publication Date:
January 14, 2021
Filing Date:
December 14, 2018
Export Citation:
Assignee:
Tohoku University
International Classes:
H01L21/8239; H01F10/14; H01F10/16; H01L27/105; H01L29/82; H01L43/08
Domestic Patent References:
| JP2018026481A | 2018-02-15 | |||
| JP2017059679A | 2017-03-23 | |||
| JP2017059690A | 2017-03-23 |
Foreign References:
| WO2016021468A1 | 2016-02-11 | |||
| US20140312441A1 | 2014-10-23 |
Attorney, Agent or Firm:
Eichi International Patent Office