SEMICONDUCTOR LIGHT EMITTING ELEMENT, ELECTRODE AND MANUFACTURING METHOD FOR THE ELEMENT, AND LAMP

WIPO Patent Application WO/2009/154191

A1

Provided are a semiconductor light emitting element having an electrode improved in junction and anticorrosion, a method for manufacturing the element, and a lamp.  The semiconductor light emitting element comprises a substrate, a laminated semiconductor layer including a light emitting layer formed over the substrate, one electrode (111) formed over the upper face of the laminated semiconductor layer, and the other electrode formed over the semiconductor layer exposing face, from which the laminated semiconductor layer is partially cut off.  The one electrode (111) includes a junction layer (110) and a bonding pad electrode (120) formed to cover the junction layer (110).  The bonding pad electrode (120) has a maximum thickness larger than the maximum thickness of the junction layer (110), and is composed of one or two or more layers.  Inclined slopes (110c), (117c) and (119c), which are made gradually thinner toward the outer circumference, are formed in the outer circumference portions (110d) and (120d) of the junction layer (110) and the bonding pad electrode (120).  Thus, it is possible to improve the junction and anticorrosion of the electrode of the semiconductor light emitting element.

HIRAIWA DAISUKE (JP)
OKABE TAKEHIKO (JP)
OHBA REMI (JP)
WATANABE MUNETAKA (JP)

PCT/JP2009/060926

December 23, 2009

June 16, 2009

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SHOWA DENKO KK (JP)
HIRAIWA DAISUKE (JP)
OKABE TAKEHIKO (JP)
OHBA REMI (JP)
WATANABE MUNETAKA (JP)

H01L33/38; H01L33/32; H01L33/40

JP2008041866A	2008-02-21
JP2006066903A	2006-03-09
JP2004006498A	2004-01-08
JP2004260178A	2004-09-16
JP2005209733A	2005-08-04
JP2005045038A	2005-02-17
JPH11340506A	1999-12-10
JPH10107318A	1998-04-24

SHIGA Masatake et al. (JP)
Masatake Shiga (JP)

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