SPUTTERING APPARATUS, METHOD FOR FORMING THIN FILM, AND METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR

WIPO Patent Application WO/2010/044257

A1

Disclosed is a sputtering apparatus which can reduce damage on a base layer.  Also disclosed are a method for forming a thin film and a method for manufacturing a field effect transistor. An embodiment of the sputtering apparatus is a sputtering apparatus for forming a thin film on a surface to be processed of a substrate (10).  The sputtering apparatus comprises a vacuum chamber (61), a supporting member (93), a target (80) and a magnet (83).  The magnet (83) generates a plasma forming a to-be-sputtered region (80a) and moves the to-be-sputtered region (80a) between a first position where the to-be-sputtered region (80a) does not face the surface to be processed and a second position where the to-be-sputtered region (80a) faces the surface to be processed.  Consequently, the incident energy of sputtering particles, which are incident upon the surface to be processed of the substrate (10) from the to-be-sputtered region (80a), is decreased, thereby enabling protection of a base layer.

KURATA TAKAOMI (JP)
KIYOTA JUNYA (JP)
ARAI MAKOTO (JP)
AKAMATSU YASUHIKO (JP)
ISHIBASHI SATORU (JP)
SAITO KAZUYA (JP)

PCT/JP2009/005342

April 22, 2010

October 14, 2009

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ULVAC INC (JP)
KURATA TAKAOMI (JP)
KIYOTA JUNYA (JP)
ARAI MAKOTO (JP)
AKAMATSU YASUHIKO (JP)
ISHIBASHI SATORU (JP)
SAITO KAZUYA (JP)

C23C14/35; C23C14/08

JPH1161401A	1999-03-05
JPH11189873A	1999-07-13
JP2001335930A	2001-12-07

OMORI, JUNICHI (JP)
Junichi Omori (JP)

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