ABRASIVE COMPOSITION FOR CONTROLLING REMOVING SPEED OF WIRING METAL IN SEMICONDUCTOR WAFER

Title:

ABRASIVE COMPOSITION FOR CONTROLLING REMOVING SPEED OF WIRING METAL IN SEMICONDUCTOR WAFER

Document Type and Number:

Japanese Patent JP2005244229

Kind Code:

A

Abstract:

To provide a water-based abrasive composition capable of controlling the removing speed of nonferrous wiring metal.

This abrasive composition is suitable for grinding a semiconductor substrate that includes thermoplastic polymer of 0.001 to 2 wt % and polyvinylpyrrolidone of 0.001 to 1 wt %. The removing speed of nonferrous wiring metal can be controlled by changing the weight ratio of the thermoplastic polymer to the polyvinylpyrrolidone.

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Inventors:

LAVOIE RAYMOND L JR
QUANCI JOHN
YE QIANQIU

Application Number:

JP2005046429A

Publication Date:

September 08, 2005

Filing Date:

February 23, 2005

Export Citation:

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Assignee:

ROHM & HAAS ELECT MAT

International Classes:

B24B37/00; B24B1/00; B44C1/22; C08J5/14; C09K3/14; H01L21/304; (IPC1-7): H01L21/304; B24B37/00; C09K3/14

Attorney, Agent or Firm:

Hajime Tsukuni
Fumio Shinoda
Koshiro Tsukuda

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