To provide an actinic ray-sensitive or radiation-sensitive resin composition allowing formation of a pattern that satisfies demands for high sensitivity, high resolution (for example, high resolving power, excellent pattern shape and minute line edge roughness (LER)) and favorable dry etching resistance, and to provide an actinic ray-sensitive or radiation-sensitive film using the composition, a mask blank having the film, and a method for forming a pattern, and more particularly, to provide an actinic ray-sensitive or radiation-sensitive resin composition exhibiting high resolving power in the formation of a fine isolated pattern through exposure using electron beams or extreme ultraviolet rays.
The actinic ray-sensitive or radiation-sensitive resin composition includes a compound (A) having a structure (P) having at least one phenolic hydroxyl group and a structure (Q) having at least one phenolic hydroxyl group whose hydrogen atom is replaced by a group (S) having a cyclic structure containing an acid crosslinking group. The group (S) having a cyclic structure containing an acid crosslinking group is a group having a polycyclic structure or a cyclic structure containing a hydroxymethyl group and/or an alkoxymethyl group.
TAKIZAWA HIROO
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Takakura Shigeo
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Toshio Shirane
Nobuhisa Nogawa
Kocho Chojiro
Naoki Kono
Katsu Sunagawa
Morisezo Iseki
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi
Takenori Masanori
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