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Patent Searching and Data


Title:
ACTIVE MATRIX SUBSTRATE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPH02162771
Kind Code:
A
Abstract:

PURPOSE: To reduce short-circuit defects between wirings and to remarkably shorten a manufacturing process by a method wherein an interface between indium tin oxide(ITO) and metal of Al or the like, silicon, or metal silicide are thermally treated.

CONSTITUTION: An intersection is constituted in such a structure that a gate wiring 1, an oxide 7, an ITO 4, an insulating film 8, and a signal wiring 2 are successively laid from below, and especially the oxide 7 is an oxide formed in such a manner that oxygen contained in the ITO 4 is thermally reacted with the material 1 such as metal of Al or the like, silicon, or silicide layer formed of silicon and metal reacted with each other. This oxide is formed on the wiring 1, whereby short-circuit defects between the wirings 1 and 2 can be remarkably reduced.


Inventors:
ONO KIKUO
KIMURA ETSUKO
KONISHI NOBUTAKE
Application Number:
JP31637688A
Publication Date:
June 22, 1990
Filing Date:
December 16, 1988
Export Citation:
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Assignee:
HITACHI LTD
International Classes:
G02F1/136; G02F1/1368; H01L21/3205; H01L23/52; H01L29/78; H01L29/786; H05K1/09; (IPC1-7): G02F1/136; H01L21/3205; H01L29/784; H05K1/09
Attorney, Agent or Firm:
Katsuo Ogawa (2 outside)