PURPOSE: To reduce masks in number in a manufacturing process by a method wherein the gate electrode of a certain conductivity type channel thin film transistor is patterned covering the element forming region of the other conductivity type channel thin film transistor with a mask and the implantation of ions is executed using the same mask, and the gate electrode of the other conductivity type channel thin film transistor is processed in succession following the same processes as above.
CONSTITUTION: After a gate electrode layer 4 is formed on the whole face, the gate electrode layer 4 of an n-channel thin film transistor is patterned using a resist mask layer 5 as mask, masking a polysilicon layer 2p of a p-channel thin film transistor with the same resist mask layer 5. Next, as the same resist mask layer 5 is left unremoved, ions are implanted. Then, the resist mask layer 5 is removed, the gate electrode layer 4 of the p-channel thin film transistor is patterned using a resist mask layer 7 as a mask, masking a polysilicon layer 2n side of an element forming region of the n-channel thin film transistor with the same resist mask layer 7. Then, as the resist mask layer 7 is left unremoved, ions are implanted.
HAYASHI HISAO
KAWAMURA AKESHI
HASHIMOTO YOSHIHIRO
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