Title:
AGENT FOR REMOVING SIDEWALL, METHOD FOR REMOVING SIDEWALLAND METHOD FOR FABRICATING SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP2001168077
Kind Code:
A
Abstract:
To provide an environment friendly method for removing sidewall having an increased degree of freedom in the step for removing a sidewall.
An aqueous solution substantially containing no organic solvent but containing a substance represented by chemical formula AF is brought into contact with a sidewall 7 thus dissolving and removing the sidewall 7. In the chemical formula AF, F is fluorine, A is H or NH4. Concentration of such a substance is preferably in the range of 1-1000 ppm and the pH of the liquid is preferably in the range of 4.5-6.9. The liquid is brought into contact with the sidewall 7 for 10 sec-60 min. Temperature of the liquid is preferably in the range of 10-90°C.
Inventors:
SUNAKAWA TSUYOSHI
Application Number:
JP34635399A
Publication Date:
June 22, 2001
Filing Date:
December 06, 1999
Export Citation:
Assignee:
SEIKO EPSON CORP
International Classes:
H01L21/3213; C09D9/00; C11D7/04; H01L21/304; H01L21/308; (IPC1-7): H01L21/304
Attorney, Agent or Firm:
Kisaburo Suzuki (2 outside)
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