Title:
アルミナベースのエッチング耐性コーティング
Document Type and Number:
Japanese Patent JP2013534039
Kind Code:
A
Abstract:
Method of forming a protective hard mask layer on a substrate in a semiconductor etch process, comprising the step of applying by solution deposition on the substrate a solution or colloidal dispersion of an alumina polymer, said solution or dispersion being obtained by hydrolysis and condensation of monomers of at least one aluminium oxide precursor in a solvent or a solvent mixture in the presence of water and a catalyst. The invention can be used for making a hard mask in a TSV process to form a high aspect ratio via a structure on a semiconductor substrate.
More Like This:
| JPS53134745 | METHOD OF PLASMA-ETCHING THIN OXIDE FILM |
| JPS6466943 | TAPER ETCHING OF SIN FILM |
| JP2023546200 | cold edge low temperature electrostatic chuck |
Inventors:
Juhatate Lantara
Thomas gadda
Wei Min Lee
David A Thomas
William McLaughlin
Thomas gadda
Wei Min Lee
David A Thomas
William McLaughlin
Application Number:
JP2013501876A
Publication Date:
August 29, 2013
Filing Date:
March 29, 2010
Export Citation:
Assignee:
Sylex Osaki Yukyuu
International Classes:
H01L21/3065; C01B33/12; C01F7/02; C08G79/10; C23C18/14; C08G77/58
Domestic Patent References:
| JP2008221201A | 2008-09-25 | |||
| JP2008189765A | 2008-08-21 | |||
| JP2009126940A | 2009-06-11 |
Attorney, Agent or Firm:
Kenji Sugimura
Keisuke Kawahara
Toshio Fukui
Keisuke Kawahara
Toshio Fukui